发明名称 |
Method for forming structures in finfet devices |
摘要 |
A method forms fin structures for a semiconductor device. The method includes forming a first fin structure including a dielectric material and including a first side surface and a second side surface; forming a second fin structure adjacent the first side surface of the first fin structure; and forming a third fin structure adjacent the second side surface of the first fin structure. The second fin structure and the third fin structure are formed of a different material than the first fin structure.
|
申请公布号 |
US6852576(B2) |
申请公布日期 |
2005.02.08 |
申请号 |
US20040825175 |
申请日期 |
2004.04.16 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LIN MING-REN;WANG HAIHONG;YU BIN |
分类号 |
H01L21/336;H01L21/8234;H01L27/088;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|