发明名称 |
Insulation film on semiconductor substrate and method for forming same |
摘要 |
An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.
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申请公布号 |
US6852650(B2) |
申请公布日期 |
2005.02.08 |
申请号 |
US20020288641 |
申请日期 |
2002.11.05 |
申请人 |
ASM JAPAN K.K. |
发明人 |
MATSUKI NOBUO;HYODO YASUYOSHI;YAMAGUCHI MASASHI;MORISADA YOSHINORI;FUKAZAWA ATSUKI;KATO MANABU |
分类号 |
B05D7/24;C09D4/00;C23C16/30;C23C16/40;H01L21/312;H01L23/29;(IPC1-7):H01L21/31 |
主分类号 |
B05D7/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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