发明名称 |
Method for using ammonium fluoride solution in a photoelectrochemical etching process of a silicon wafer |
摘要 |
A method for using ammonium fluoride solution in a photoelectrochemical etching process of a silicon wafer, comprising steps of: placing a wafer after the pre-etching process into an alcohol solution for activating the surface of wafer and into an ammonium fluoride solution as an etching solution; and illuminating the back of wafer with a halogen light and performing a photoelectrochemical etching process in a potentiostatic.
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申请公布号 |
US6852643(B1) |
申请公布日期 |
2005.02.08 |
申请号 |
US20030673349 |
申请日期 |
2003.09.30 |
申请人 |
NATIONAL CENTRAL UNIVERSITY |
发明人 |
LIN JING-CHIE;TSAI CHIH-CHANG;LAI CHIEN-MING;HSIAO WEN-CHU |
分类号 |
C25F3/12;C25F3/14;H01L21/302;H01L21/306;H01L21/3063;(IPC1-7):H01L21/302 |
主分类号 |
C25F3/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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