发明名称 Method for using ammonium fluoride solution in a photoelectrochemical etching process of a silicon wafer
摘要 A method for using ammonium fluoride solution in a photoelectrochemical etching process of a silicon wafer, comprising steps of: placing a wafer after the pre-etching process into an alcohol solution for activating the surface of wafer and into an ammonium fluoride solution as an etching solution; and illuminating the back of wafer with a halogen light and performing a photoelectrochemical etching process in a potentiostatic.
申请公布号 US6852643(B1) 申请公布日期 2005.02.08
申请号 US20030673349 申请日期 2003.09.30
申请人 NATIONAL CENTRAL UNIVERSITY 发明人 LIN JING-CHIE;TSAI CHIH-CHANG;LAI CHIEN-MING;HSIAO WEN-CHU
分类号 C25F3/12;C25F3/14;H01L21/302;H01L21/306;H01L21/3063;(IPC1-7):H01L21/302 主分类号 C25F3/12
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