| 发明名称 |
Silicon carbide semiconductor device |
| 摘要 |
A silicon carbide (SiC) substrate is provided with an off-oriented {0001} surface whose off-axis direction is <11-20>. A trench is formed on the SiC to have a stripe structure extending toward a <11-20> direction. An SiC epitaxial layer is formed on an inside surface of the trench.
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| 申请公布号 |
US6853006(B2) |
申请公布日期 |
2005.02.08 |
| 申请号 |
US20030630978 |
申请日期 |
2003.07.31 |
| 申请人 |
DENSO CORPORATION |
发明人 |
KATAOKA MITSUHIRO;TAKEUCHI YUUICHI;NAITO MASAMI;KUMAR RAJESH;MATSUNAMI HIROYUKI;KIMOTO TSUNENOBU |
| 分类号 |
H01L29/80;H01L21/04;H01L21/337;H01L29/04;H01L29/24;H01L29/808;(IPC1-7):H01L31/312 |
主分类号 |
H01L29/80 |
| 代理机构 |
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代理人 |
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