发明名称 |
Power MOSFET having enhanced breakdown voltage |
摘要 |
A MOSFET includes a dielectric, preferably in the form of a metal thick oxide that extends alongside the MOSFET's drift region. A voltage across this dielectric between its opposing sides exerts an electric field into the drift region to modulate the drift region electric field distribution so as to increase the breakdown voltage of a reverse biased semiconductor junction between the drift region and body region. This allows for higher doping of the drift region, for a given breakdown voltage when compared to conventional MOSFETs.
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申请公布号 |
US6853033(B2) |
申请公布日期 |
2005.02.08 |
申请号 |
US20020162137 |
申请日期 |
2002.06.04 |
申请人 |
NATIONAL UNIVERSITY OF SINGAPORE |
发明人 |
LIANG YUNG CHII;SAMUDRA GANESH SHANKAR;GAN KIAN PAAU;YANG XIN |
分类号 |
H01L21/316;H01L21/336;H01L29/06;H01L29/40;H01L29/417;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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