| 摘要 |
Various methods, apparatuses, and systems in which a read only memory is arrayed in a multiple rows and columns. A first column of memory cells is organized into groups of memory cells including a first group of memory cells and a second group of memory cells. A first source line connects to one or more memory cells in the first group of memory cells. The first source line changes its voltage state during a read operation on one or more bit cells in the first group. A second source line connects to one or more memory cells in the second group of memory cells. The second source line maintains its voltage state during the read operation.
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