发明名称 Self-aligned rear electrode for diode array element
摘要 A PIN active pixel sensor array including self aligned encapsulated electrodes and a method for forming the same the method including forming an electrically conductive layer over a substrate; forming a first doped semiconductor layer over the conductive layer; photolithographically patterning and etching through a thickness portion of the first doped semiconductor layer and conductive layer to expose the substrate to form a plurality of spaced apart electrodes having an upper portion comprising the first doped semiconductor layer; blanket depositing a second doped semiconductor layer to cover the spaced apart electrodes including the exposed substrate; and, etching through at least a thickness portion of the second doped semiconductor layer.
申请公布号 US6852566(B2) 申请公布日期 2005.02.08
申请号 US20030386871 申请日期 2003.03.12
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD 发明人 YAUNG DUN-NIAN
分类号 H01L21/00;H01L27/146;H01L29/15;H01L31/075;H01L33/00;(IPC1-7):H01L21/00 主分类号 H01L21/00
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