发明名称 |
Self-aligned rear electrode for diode array element |
摘要 |
A PIN active pixel sensor array including self aligned encapsulated electrodes and a method for forming the same the method including forming an electrically conductive layer over a substrate; forming a first doped semiconductor layer over the conductive layer; photolithographically patterning and etching through a thickness portion of the first doped semiconductor layer and conductive layer to expose the substrate to form a plurality of spaced apart electrodes having an upper portion comprising the first doped semiconductor layer; blanket depositing a second doped semiconductor layer to cover the spaced apart electrodes including the exposed substrate; and, etching through at least a thickness portion of the second doped semiconductor layer.
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申请公布号 |
US6852566(B2) |
申请公布日期 |
2005.02.08 |
申请号 |
US20030386871 |
申请日期 |
2003.03.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
YAUNG DUN-NIAN |
分类号 |
H01L21/00;H01L27/146;H01L29/15;H01L31/075;H01L33/00;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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