| 摘要 |
An offset of the switching magnetic field of a memory layer caused by a static magnetic field from a pinned layer in a magnetoresistive element used as a memory element is suppressed. A first magnetic layer magnetized perpendicularly to the film surface, an insulating layer, and a second magnetic layer magnetized perpendicularly to the film surface form the magnetoresistive element. The coercive force of the second magnetic layer is higher than that of the first magnetic layer. Upon the flow of current between the first magnetic layer and the second magnetic layer via the insulating layer N2, the resistance changes depending on the relative angle in magnetization between the two magnetic layers. A magnetic field applied from the second magnetic layer 2 to the first magnetic layer 1 is set smaller than the coercive force of the first magnetic layer 1.
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