发明名称 |
Emission process for a single photon, corresponding semiconducting device and manufacturing process |
摘要 |
An integrated circuit includes a semiconductor device forming a single photon source, and includes a MOS transistor on a silicon substrate. The MOS transistor has a mushroom shaped gate for outputting a single electron on its drain in a controlled manner in response to a control voltage applied to its gate. The transistor also includes at least one silicon compatible quantum box. The quantum box is electrically coupled to the drain region of the transistor, and is capable of outputting a single photon on reception of a single electron emitted by the transistor.
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申请公布号 |
US6852993(B2) |
申请公布日期 |
2005.02.08 |
申请号 |
US20030429908 |
申请日期 |
2003.05.05 |
申请人 |
STMICROELECTRONICS SA |
发明人 |
MONFRAY STEPHANE;DUTARTRE DIDIER;BOEUF FREDERIC |
分类号 |
H01S5/34;(IPC1-7):H01L29/06;H01L31/072;H01L31/109 |
主分类号 |
H01S5/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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