发明名称 |
Semiconductor device and manufacturing method therefor, circuit board, and electronic equipment |
摘要 |
A method of manufacturing a semiconductor device comprises a step of forming a through-hole in a semiconductor chip having an electrode and forming a conductive layer on a region comprising an inner side of the through-hole. An intermediate portion of the through-hole is formed to be larger than an edge portion thereof, and the conductive layer is formed by electroless plating.
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申请公布号 |
US6852621(B2) |
申请公布日期 |
2005.02.08 |
申请号 |
US20030698432 |
申请日期 |
2003.11.03 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
HANAOKA TERUNAO;WADA KENJI;HASHIMOTO NOBUAKI;ITO HARUKI;UMETSU KAZUSHIGE;MATSUSHIMA FUMIAKI |
分类号 |
H01L25/18;H01L21/288;H01L21/768;H01L23/48;H01L25/065;H01L25/07;(IPC1-7):H01L21/476 |
主分类号 |
H01L25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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