发明名称 Semiconductor device and manufacturing method therefor, circuit board, and electronic equipment
摘要 A method of manufacturing a semiconductor device comprises a step of forming a through-hole in a semiconductor chip having an electrode and forming a conductive layer on a region comprising an inner side of the through-hole. An intermediate portion of the through-hole is formed to be larger than an edge portion thereof, and the conductive layer is formed by electroless plating.
申请公布号 US6852621(B2) 申请公布日期 2005.02.08
申请号 US20030698432 申请日期 2003.11.03
申请人 SEIKO EPSON CORPORATION 发明人 HANAOKA TERUNAO;WADA KENJI;HASHIMOTO NOBUAKI;ITO HARUKI;UMETSU KAZUSHIGE;MATSUSHIMA FUMIAKI
分类号 H01L25/18;H01L21/288;H01L21/768;H01L23/48;H01L25/065;H01L25/07;(IPC1-7):H01L21/476 主分类号 H01L25/18
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