Method for forming a low temperature polysilicon CMOS thin film transistor

摘要

A method for forming a low temperature polysilicon complementary metal oxide semiconductor thin film transistor (LTPS CMOS TFT). It utilizes six photo-etching processes (PEP) to form the LTPS CMOS TFT that comprises an N type metal oxide semiconductor thin film transistor (NMOS TFT) having lightly doped drains (LDD) and a P type metal oxide semiconductor thin film transistor (PMOS TFT).