发明名称 |
Method for manufacturing tantalum oxy nitride capacitors |
摘要 |
A method for manufacturing a capacitor using a tantalum oxy nitride (TaON) film in a process for a semiconductor device. More particularly, a method for manufacturing a capacitor which reduces a number of steps and thus increases yield by in-situ performing P-doping after forming a MPS (Metastable Poly Silicon) on a lower electrode and forming a nitride film before forming a tantalum oxy nitride film to prevent the concentration of phosphor contained in the lower electrode from being reduced by removing the phosphor on the surface of the lower electrode in a cleaning process between the above two steps, for thereby increasing the capacitance of the capacitor.
|
申请公布号 |
US6852136(B2) |
申请公布日期 |
2005.02.08 |
申请号 |
US20010021322 |
申请日期 |
2001.12.12 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
PARK DONG-SU;JEON KWANG-SEOK |
分类号 |
H01G4/33;H01L21/02;H01L21/314;H01L21/318;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;(IPC1-7):H01G9/00 |
主分类号 |
H01G4/33 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|