METHOD FOR ESTIMATING SEMICONDUCTOR DEVICE TO PROPERLY IMPROVE QUALITY OF GATE INSULATION LAYER

摘要

PURPOSE: A method for estimating a semiconductor device is provided to properly improve the quality of a gate insulation layer by quantitatively diving a leakage current by a leakage path. CONSTITUTION: A stack layer is composed of a semiconductor, an insulator and a conductor. A voltage is applied to the conductor with a radius of r to measure a gate leakage current. The gate leakage current is divided by an area of a region in which the semiconductor overlaps the conductor, so as to calculate a current density Jg. The coefficients of a formula Jg=2A/r+B(A and B are coefficients) is used to calculate a depletion layer edge leakage current and an in-plane leakage current.