| 摘要 |
PURPOSE: A method of fabricating an LDD type CMOS transistor is provided to prevent a fitting phenomenon of a gate poly on a field oxide layer by forming obliquely mask patterns to overlap predetermined regions of boundaries of mask patterns. CONSTITUTION: An LDD region(105,106) is formed by a selective ion implantation process using mask patterns having opposite phases of each MOS transistor of a semiconductor substrate(100) including a field oxide layer(101), a gate oxide layer(102), a gate poly(103), and a cap oxide layer. A sidewall spacer(107) is formed on the gate poly. A source/drain region(108,109) is formed by a selective ion implantation process for each MOS transistor. Each of the mask patterns is formed obliquely in order to be overlapped in a predetermined region of the field oxide layer.
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