发明名称 METHOD FOR FORMING MULTILAYER INTERCONNECTION STRUCTURE AND METHOD FOR FABRICATING MULTILAYER INTERCONNECTION SUBSTRATE TO FORM CONTACT HOLE FOR COUPLING INTERCONNECTION LAYERS
摘要 <p>PURPOSE: A method for forming a multilayer interconnection structure is provided to form a contact hole for coupling interconnection layers by guaranteeing the conduction between layers without influencing the capacity of a device. CONSTITUTION: The first interconnection layer(11) is formed on a substrate(10). An insulation layer having an opening(H1,H2) in a predetermined position on the first interconnection layer is formed. The second interconnection layer(13) conducting to the first interconnection layer through the opening is formed on the insulation layer. The process for forming the insulation layer is performed by the following steps. A mask material is formed in a predetermined position on the first interconnection layer. The insulation layer is formed on the substrate except the mask material. The mask material is eliminated to form an opening in the insulation layer.</p>
申请公布号 KR20050014679(A) 申请公布日期 2005.02.07
申请号 KR20040057664 申请日期 2004.07.23
申请人 SEIKO EPSON CORPORATION 发明人 SATO, MITSURU;YUDASAKA, ICHIO
分类号 H01L21/28;H01L21/00;H01L21/02;H01L21/288;H01L21/3205;H01L21/4763;H01L21/768;H01L29/786;H05K3/00;H05K3/46;(IPC1-7):H01L21/320 主分类号 H01L21/28
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