发明名称 |
ACTIVE PIXEL SENSOR OF AN IMAGE SENSOR INCLUDING A DRAM TO REDUCE AN AREA OF THE ACTIVE PIXEL SENSOR |
摘要 |
PURPOSE: An APS(Active Pixel Sensor) of an image sensor including a DRAM(Dynamic Random Access Memory) is provided to reduce an area of the APS by increasing efficiency of the APS by using an internal voltage circuit in the DRAM when the DRAM and the image sensor are implemented in one chip. CONSTITUTION: A Vpp voltage and a Vbb voltage used in a DRAM are used as drive voltages of an APS(100) and well biases of a photo diode(PD) in a CMOS(Complementary Metal Oxide Semiconductor) image sensor. The Vpp voltage is used as a gate bias of each of a transfer transistor(Tx) and a reset transistor(Rx) included in the APS. |
申请公布号 |
KR20050014079(A) |
申请公布日期 |
2005.02.07 |
申请号 |
KR20030052522 |
申请日期 |
2003.07.30 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
CHI, SEO YONG |
分类号 |
H04N5/3745;H01L27/146;(IPC1-7):H04N5/335 |
主分类号 |
H04N5/3745 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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