METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO CONTROL GENERATION OF VOID IN SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to control generation of a void in a semiconductor substrate by improving an interfacial characteristic between a buffer oxide layer and a spacer nitride layer. CONSTITUTION: A buffer oxide layer(18) is formed on a conductive interconnection formed on a semiconductor substrate(10). A heat treatment process using NH3 gas is performed to convert the surface of the buffer oxide layer into a nitride layer. A spacer nitride layer is deposited on the buffer oxide layer to form a nitride layer spacer on the sidewall of the conductive interconnection.