METHOD FOR FABRICATING FLOATING GATE OF FLASH MEMORY DEVICE TO IMPROVE COUPLING RATIO AND REDUCE VOLTAGE APPLIED TO CONTROL GATE

摘要

PURPOSE: A method for fabricating a floating gate of a flash memory device is provided to improve a coupling ratio and reduce a voltage applied to a control gate by increasing the area of a floating gate. CONSTITUTION: Polysilicon is formed on a silicon substrate. Dopants are injected to the polysilicon. A photoresist pattern is formed and etched on the polysilicon. The polysilicon is formed on the silicon substrate on which a gate oxide layer is grown. The injected dopants are diffused by an annealing process.