| 摘要 |
A substrate processing chamber has a component having a surface that is exposed inside the chamber. The exposed surface can have a pattern of recesses that are spaced apart from one another, each recess having an opening, sidewalls, and a bottom wall. The recesses are formed by directing a pulsed laser beam onto a position on a surface of the structure for a time sufficiently long to vaporize a portion of the structure at that position. The component can also be a gas distributor having an enclosure with plurality of laser drilled gas outlets having first and second openings with different diameters to reduce an ingress of a plasma into the enclosure. The laser drilled gas outlets can also have rounded edges. |
