| 摘要 |
PURPOSE: A plasma process apparatus is provided to reduce fabricating cost, by eliminating ion bombardment of a substrate to be processed, by improving the quality of a layer and by efficiently removing the particles in a process chamber. CONSTITUTION: A process chamber is prepared. A substrate maintaining part(23) maintains a substrate(4) to be processes, installed in the process chamber. A composite electrode(28) has a plurality of discharge electrodes for generating plasma, installed in the process chamber and confronting the substrate maintaining part. A material gas supply part supplies material gas to the inside of the process chamber. A plasma region increasing/decreasing part(21) increases/decreases a plasma region formed in the process chamber. A cleaning part cleans the inside of the process chamber by using plasma of the plasma region increased or decreased by the plasma region increasing/decreasing part.
|
