| 摘要 |
PURPOSE: A semiconductor light emitting device is provided to maximumly guarantee a path of the light emitted upward and minimize the light absorbed to or reflected from a conventional bonding pad by disposing the bonding pad formed on a transparent conductive layer of a III-group nitride LED on a sapphire substrate. CONSTITUTION: A proper buffer layer(11), an n-type Al(x)Ga(y)ln(z)N(0<=x<=1, 0<=y<= 1, 0<=z<=1) layer(12), an Al(x)Ga(y)ln(z)N(0<=x<=1, 0<=y<=1, 0<=z<=1) active layer(13) and a p-type Al(x)Ga(y)ln(z)N(0<=x<=1, 0<=y<=1, 0<=z<=1) layer(14) are formed on a substrate(10) to form a compound semiconductor LED device. A light transmitting electrode(15) is formed in the front surface or in a part of the front surface of the uppermost layer, coming in contact with the uppermost layer. The p-type Al(x)Ga(y)ln(z)N(0<=x<=1, 0<=y<=1, 0<=z<=1) layer, the active layer and the n-type Al(x)Ga(y)ln(z)N(0<=x<=1, 0<=y<=1, 0<=z<=1) layer are partially removed to expose the substrate, and are partially removed to expose the n-type Al(x)Ga(y)ln(z)N(0<=x<=1, 0<= y<=1, 0<=z<=1) layer. A transparent insulation layer(16) is formed in a region except the exposed substrate, the exposed n-type Al(x)Ga(y)ln(z)N layer and a part of a transparent electrode. The first electrode(18) connects the exposed substrate with the exposed transparent electrode. The second electrode(17) is formed on the exposed n-type Al(x)Ga(y)ln(z)N layer.
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