METHOD FOR FORMING HYBRID LAYER INTERCONNECTION OF SEMICONDUCTOR TO IMPROVE RC DELAY

摘要

PURPOSE: A method for forming a hybrid layer interconnection of a semiconductor is provided to improve an RC delay by forming a hybrid layer interconnection of copper and aluminum. CONSTITUTION: After copper(20) and aluminum(10) are sequentially formed by using an arbitrary thickness of aluminum as a starting material, aluminum as a final material is deposited. A patterning process using a desired quantity of photoresist is performed, and a dry etch process is carried out to form a pattern(40). The deposited layer is formed by a sputtering method or an ALD(atomic layer deposition) method.