PLASMA ETCHING APPARATUS FOR CONTROLLING PROPERLY INTENSITY OF RF ELECTRIC FIELD AND IMPROVING ETCHING UNIFORMITY

摘要

PURPOSE: A plasma etching apparatus is provided to control properly intensity of RF electric field and improve etching uniformity by adjusting a shape of an upper electrode to form a discontinuous interval between opposite sides of the upper electrode and a lower electrode. CONSTITUTION: An upper electrode(25) is opposite to a lower electrode(23). A substrate(24) is arranged on the lower substrate. An RF generator is used for generating plasma by applying an RF voltage to one of the upper electrode and the lower electrode. An interval between opposite sides of the upper electrode and the lower electrode is discontinuously formed by adjusting a shape of the upper electrode.