FABRICATING METHOD OF SHALLOW TRENCH ISOLATION STRUCTURE AND MICRO-ELECTRONIC DEVICE HAVING THE SAME STRUCTURE FOR IMPROVING ISOLATION CHARACTERISTIC

摘要

PURPOSE: A fabricating method of a shallow trench isolation structure and a micro-electronic device having the same structure are provided to improve an isolation characteristic by forming an STI structure having a sufficient depth without a void. CONSTITUTION: A shallow trench isolation region having a first aspect ratio is formed by etching a predetermined region of a substrate(100). The shallow trench isolation region is covered with a polysilicon layer. The polysilicon layer is selectively removed by performing an etch-back process using diluted ammonia water in order to form a first filler. The residual trench isolation region having a second aspect ratio is formed by forming the first filler. The residual trench isolation region is filled with a second filler in order to complete a shallow trench isolation structure.