发明名称 GAS SUPPLY APPARATUS OF ION IMPLANTATION INCREASING ION GENERATING EFFICIENCY DUE TO COLLISION WITH MORE THERMIONS BY DISTRIBUTING OVER MORE WIDER RANGE
摘要 PURPOSE: A gas supply apparatus of an ion implantation is provided to divide an introducing portion of a gas inlet pipe into two pipes. CONSTITUTION: An introducing portion of a gas inlet pipe(20) connected with a arc chamber(10) is divided into a first and second inlet pipes(21,22) in order to enlarge the distribution range of source gas. The first inlet pipe is connected with a portion located at the side opposite to a filament(11). the second inlet pipe is connected with a portion adjacent to the filament.
申请公布号 KR20050013346(A) 申请公布日期 2005.02.04
申请号 KR20030051968 申请日期 2003.07.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, DONG JIN
分类号 H01L21/265;(IPC1-7):H01L21/265 主分类号 H01L21/265
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