发明名称 |
GAS SUPPLY APPARATUS OF ION IMPLANTATION INCREASING ION GENERATING EFFICIENCY DUE TO COLLISION WITH MORE THERMIONS BY DISTRIBUTING OVER MORE WIDER RANGE |
摘要 |
PURPOSE: A gas supply apparatus of an ion implantation is provided to divide an introducing portion of a gas inlet pipe into two pipes. CONSTITUTION: An introducing portion of a gas inlet pipe(20) connected with a arc chamber(10) is divided into a first and second inlet pipes(21,22) in order to enlarge the distribution range of source gas. The first inlet pipe is connected with a portion located at the side opposite to a filament(11). the second inlet pipe is connected with a portion adjacent to the filament.
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申请公布号 |
KR20050013346(A) |
申请公布日期 |
2005.02.04 |
申请号 |
KR20030051968 |
申请日期 |
2003.07.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, DONG JIN |
分类号 |
H01L21/265;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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