| 发明名称 |
DIODE SCHOTTKY DE PUISSANCE A SUBSTRAT SiCOI, ET PROCEDE DE REALISATION D'UN TELLE DIODE |
| 摘要 |
<p>The present invention relates to a power junction device including a substrate of the SiCOI type with a layer of silicon carbide ( 16 ) insulated from a solid carrier ( 12 ) by a buried layer of insulant ( 14 ), and including at least one Schottky contact between a first metal layer ( 40 ) and the surface layer of silicon carbide ( 16 ), the first metal layer ( 30 ) constituting an anode.</p> |
| 申请公布号 |
FR2837322(B1) |
申请公布日期 |
2005.02.04 |
| 申请号 |
FR20020003165 |
申请日期 |
2002.03.14 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;SOITEC |
发明人 |
TEMPLIER FRANCOIS;BILLON THIERRY;DAVAL NICOLAS |
| 分类号 |
H01L21/04;H01L21/338;H01L29/24;H01L29/47;H01L29/786;H01L29/812;H01L29/872;(IPC1-7):H01L29/872;H01L21/84;H01L21/329 |
主分类号 |
H01L21/04 |
| 代理机构 |
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| 主权项 |
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