| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the performance of a p-SiTFT, an a-SiTFT, etc. is improved and their characteristics are stabilized, a method for manufacturing the semiconductor device and a processor. SOLUTION: The manufacturing method is provided with a process for bringing all surfaces including a semiconductor layer on a glass substrate 21 or the like into contact with a solution 22 containing a cyanogen compound which is selected from alcohol group solutions containing the cyanogen compound or non-metallic cyanogen compounds, and a process for cleaning the substrate 21 by a cleaning part 24. Consequently, contaminations stuck to a surface area and containing metals are removed as a compound with cyanogen or a complex of cyanide; defects such as uncoupled hands of a semiconductor layer generated in a thin film forming process, uncoupled hands generated due to the adhesion of the contaminations and their composite defects are remarkably reduced; and the performance of a TFT type semiconductor device is sharply improved. COPYRIGHT: (C)2005,JPO&NCIPI
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