| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron device having high reliability in simple constitution by eliminating malfunction generated when reducing a parasite capacity between pieces of wiring laminated through an interlayer insulating film. SOLUTION: The electron device comprises a semiconductor layer 22 formed on a substrate 10, a gate insulating layer 31 formed on the semiconductor layer 22, a prescribed pattern gate electrode 32 formed on the gate insulating layer 31, an interlayer insulating film 33 formed so as to be covered on the gate electrode 32, and a source electrode 36 and a drain electrode 37 formed on the interlayer insulating film 33. The interlayer insulating film 33 is composed so that nitrogen concentration mainly comprises silicon oxide and nitride of 2 atom% or larger. COPYRIGHT: (C)2005,JPO&NCIPI
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