发明名称 Monolithic amplifier with high-value, monolithically formed passive feedback resistor
摘要 A monolithic amplifier that has a high-value passive feedback resistor. The passive feedback resistor is formed from arsenic implanted polysilicon, that has a sheet resistivity on the order of 1 GOmega per square, and is connected to form a resistor of at least 1 GOmega, more preferably 7.5 GOmega or more. The resistor is connected as the feedback resistor of a cascode amplifier and a capacitor is formed in parallel with the feedback resistor. A low noise amplifier can therefore be formed that is DC coupled and uses a completely passive resistance feedback element.
申请公布号 US2005024150(A1) 申请公布日期 2005.02.03
申请号 US20040868188 申请日期 2004.06.14
申请人 GORDON JEFF;CARLSON LARS S. 发明人 GORDON JEFF;CARLSON LARS S.
分类号 H03F1/34;H03F3/195;(IPC1-7):H03F3/14 主分类号 H03F1/34
代理机构 代理人
主权项
地址