发明名称 |
Monolithic amplifier with high-value, monolithically formed passive feedback resistor |
摘要 |
A monolithic amplifier that has a high-value passive feedback resistor. The passive feedback resistor is formed from arsenic implanted polysilicon, that has a sheet resistivity on the order of 1 GOmega per square, and is connected to form a resistor of at least 1 GOmega, more preferably 7.5 GOmega or more. The resistor is connected as the feedback resistor of a cascode amplifier and a capacitor is formed in parallel with the feedback resistor. A low noise amplifier can therefore be formed that is DC coupled and uses a completely passive resistance feedback element.
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申请公布号 |
US2005024150(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20040868188 |
申请日期 |
2004.06.14 |
申请人 |
GORDON JEFF;CARLSON LARS S. |
发明人 |
GORDON JEFF;CARLSON LARS S. |
分类号 |
H03F1/34;H03F3/195;(IPC1-7):H03F3/14 |
主分类号 |
H03F1/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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