| 摘要 |
<p>A plasma generating apparatus comprising a cathode (62) and an anode (64) arranged on one side opposite to the surface of a work (16) to be processed is disclosed. A plasma is generated between the cathode (62) and anode (64), thereby enabling to etch the work. The cathode (62) is so arranged that one end face thereof faces the surface of the work (16) to be processed, and an electrically insulating body (66) is provided around the periphery of the cathode (62). The anode (64) is arranged around the insulating body (66) so that one end face thereof faces the surface of the work to be processed. A high-frequency power supply (68) is provided for applying a high-frequency voltage between the cathode (62) and anode (64). With this plasma generating apparatus, an appropriate etching can be performed regardless of the thickness of the work. Consequently, the plasma generating apparatus can be preferably used for etching of various works.</p> |
