| 摘要 |
<p>An integrated circuit that supports digital circuits, analog circuits, and RF circuits on a single IC. Digital CMOS circuitry lies on a low resistivity layer that provides good latch-up qualities and allows for dense PAD I/O. Analog CMOS circuitry rests on an isolated well region on a highly resistive layer in order to minimize signal crosstalk through the substrate. Analog BJT devices also sit on a highly resistive region within its own well structure in order to minimize parasitic capacitances and provide for high frequency device switching. RF passive elements, such as inductors and capacitors, rest on a highly resistive region in order to minimize signal losses that especially occur at high frequencies. RF active components rest on a highly resistive region to maximize device performance.</p> |
