| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique for improving the film thickness, composition, and concentration of a doping material of a nitride compound semiconductor epitaxial layer throughout the surface of a substrate when the epitaxial layer is formed on the substrate. <P>SOLUTION: A substrate 101 is formed of of silicon carbide, sapphire, gallium nitride, or aluminum nitride and subjected to polishing so as to turn its both surfaces convex or to make its center thicker than its peripheral part. The substrate 101 is used as a substrate for epitaxially growing nitride compound semiconductor multilayered thin films (102 to 103). <P>COPYRIGHT: (C)2005,JPO&NCIPI |
