| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon carbide film having a low dielectric constant, large compressive stress, and a small leak current. SOLUTION: In order to evaporate a silicon carbide layer on a substrate, a source gas of silicon, carbon, and nitrogen and gas including an inert gas are introduced into a reaction region. An electric field is generated using low- and high-frequency RF power in order to generate plasma discharge in the reaction region for film vapor deposition. The average power on the substrate is substantially constant. The ratio of the total RF power to the low-frequency RF power is≤about 0.5. COPYRIGHT: (C)2005,JPO&NCIPI
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