| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for selectively patterning a silicon germanium layer by ion implantation. SOLUTION: After P is selectively ion-implanted into the silicon germanium layer and properties of resistance to etching are given to the ion-implanted part of the silicon germanium layer, the part of the silicon germanium layer that is not ion-implanted is selectively removed by isotropic etching. Hereby, as in a structure in which a Si layer, a silicon germanium layer, and a Si layer are stacked sequentially, when the silicon germanium layer is introduced as an intermediate layer, it is possible to pattern only the silicon germanium layer without patterning the upper layer or the lower layer. COPYRIGHT: (C)2005,JPO&NCIPI
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