| 摘要 |
PROBLEM TO BE SOLVED: To provide a monolithic integrated high-voltage resistance structure having an IGBT(insulated gate bipolar transistor) device which has structural and functional characteristics capable of suppressing the occurrence of a parasitic transistor and which overcomes a limited condition and defect affecting the above conventional devices. SOLUTION: In the device in which a second conductive semiconductor layer(19) is integrated on a laminated first conductive semiconductor substrate(16) and which includes a resistance structure(17) for voltage control and an IGBT device(18), the resistance structure(17) surrounds a part(22) of the semiconductor layer(19), shows the first conductive type, and includes at least one of substantially ring-like regions(21a). COPYRIGHT: (C)2005,JPO&NCIPI
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