发明名称 NAND-type flash memory devices and methods of fabricating the same
摘要 NAND-type flash memory devices and methods of fabricating the same are provided. The NAND-type flash memory device includes a plurality of isolation layers running parallel with each other, which are formed at predetermined regions of a semiconductor substrate. This device also includes a string selection line pattern, a plurality of word line patterns and a ground selection line pattern which cross over the isolation layers and active regions between the isolation layers. Source regions are formed in the active regions adjacent to the ground selection line patterns and opposite the string selection line pattern. The source regions and the isolation layers between the source regions are covered with a common source line running parallel with the ground selection line pattern.
申请公布号 US2005023600(A1) 申请公布日期 2005.02.03
申请号 US20040921656 申请日期 2004.08.19
申请人 SAMSUNG ELECTRONICS, CO. LTD 发明人 SHIN KWANG-SHIK;PARK KYU-CHARN;OH HEUNG-KWUN;HUR SUNG-HOI;SONG SANG-BIN;CHOI JUNG-DAL
分类号 H01L21/768;H01L21/8247;H01L27/115;H01L29/78;H01L29/788;(IPC1-7):H01L29/788 主分类号 H01L21/768
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