发明名称 |
Strained silicon carbon alloy MOSFET structure and fabrication method thereof |
摘要 |
A MOSFET structure utilizing strained silicon carbon alloy and fabrication method thereof. The MOSFET structure includes a substrate, a graded SiGe layer, a relaxed buffer layer, a strained silicon carbon alloy channel layer, a gate dielectric layer, a polysilicon gate electrode (or metal gate electrode) and a source/drain region.
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申请公布号 |
US2005023520(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20040791816 |
申请日期 |
2004.03.04 |
申请人 |
LEE MIN-HUNG;CHANG SHU TONG;LU SHING CHII;LIU CHEE-WEE |
发明人 |
LEE MIN-HUNG;CHANG SHU TONG;LU SHING CHII;LIU CHEE-WEE |
分类号 |
H01L21/336;H01L29/10;(IPC1-7):H01L29/06 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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