发明名称 PROCESS FOR PRODUCING SINGLE CRYSTAL AND APPARATUS FOR SINGLE CRYSTAL PRODUCTION
摘要 <p>A process for producing a single crystal through pullup of a single crystal from a raw material accommodated in a crucible and heated and molten by means of heater according to the Czochralski method, wherein the inside diameter of the heater is at least 1.26 times the inside diameter of the crucible so as to form allover N-region crystal. There is further provided an apparatus for single crystal production according to the Czochralski method, including at least a crucible capable of accommodating a raw material melt, a heater disposed so as to surround the crucible and capable of heating the raw material accommodated in the crucible into molten form and pullup means for pulling up a single crystal from the raw material melt accommodated in the crucible, wherein the inside diameter of the heater is at least 1.26 times the inside diameter of the crucible. The thus provided process and apparatus for single crystal production can increase the pullup rate in the production of low-oxygen N-region crystal and can realize productivity enhancement.</p>
申请公布号 WO2005010242(A1) 申请公布日期 2005.02.03
申请号 WO2004JP07619 申请日期 2004.06.02
申请人 SHIN-ETSU HANDOTAI CO., LTD.;IIDA, MAKOTO 发明人 IIDA, MAKOTO
分类号 C30B15/00;C30B15/14;C30B29/06;(IPC1-7):C30B15/00 主分类号 C30B15/00
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