| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device which can reduce light absorption by a reflector to enhance light-emitting intensity, in the case of using an optical semiconductor chip having luminous intensity distribution that exhibits the highest light intensity with light beams proceeding to a direction which is tilted with respect to a central axis extending thicknesswise. <P>SOLUTION: The optical semiconductor device A1 comprises: an LED chip 3 for radially emitting light and having luminous intensity distribution that exhibits the highest light intensity with light beams proceeding to a direction which is tilted with respect to the central axis C extending thicknesswise; and the reflector 5 having first and second light reflecting faces 50a, 50b surrounding the LED chip 3 centering on the central axis C. The second light reflecting face 50b is arranged so that it has a height which does not block a light beam L1b having the highest light intensity among the light beams emitted from the LED chip 3. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
