| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device, which can be applied for inspecting the removal of an edge bead and are used for emphasizing an image contrast between a region covered with a resist and an uncovered silicon region on a wafer. SOLUTION: The wafer is irradiated separately with an (s) polarization component and a (p) polarization component at an illuminating angle close to the Brewster angle of silicon or a resist, and an image difference between the reflected light of the (s) polarization component and the reflected light of the (p) polarization component is obtained. COPYRIGHT: (C)2005,JPO&NCIPI
|
