| 摘要 |
PROBLEM TO BE SOLVED: To enable the steep doping of Mg in a vapor phase epitaxy method of a compound semiconductor wherein Cp<SB>2</SB>Mg is used as a doping material for an AlGaInP-based compound semiconductor. SOLUTION: Prior to the growing of a semiconductor layer to preferably add Mg, gas containing only CP<SB>2</SB>Mg steam is made to flow inside a pipe heated to not lower than 40°C nor higher than 80°C within a range satisfying 0.05≤W/S≤1, where S (square centimeter) is a surface area inside the pipe wherein hydrogen gas or nitrogen gas containing only Cp<SB>2</SB>Mg steam is made to flow, and W (microgram) is the total weight of Cp<SB>2</SB>Mg in the Cp<SB>2</SB>Mg steam mixed gas which is made to flow in the pipe before the growing of the semiconductor layer to preferably add Mg. COPYRIGHT: (C)2005,JPO&NCIPI
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