METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which a High-k film can be etched while preventing the side etching of a gate electrode. SOLUTION: When a polysilicon film pattern 111 is formed as a gate electrode on a High-k film 105, the High-k film 105 is dry-etched using boron-trichlodide gas and nitrogen gas. Subsequently, an SiO2film 104 and a sidewall protective film 112 composed of boron nitride are removed. One film selected from a group of an HfO2film, an HfAlOxfilm and an HfSiOxfilm can be employed as the High-k film 105. COPYRIGHT: (C)2005,JPO&NCIPI