| 摘要 |
PROBLEM TO BE SOLVED: To provide an excellent semiconductor device which can carry bipolar transistors having different current amplification factors without increasing a cost required to manufacture the semiconductor device and to provide a method for manufacturing the same in the semiconductor device and the method for manufacturing the same which carries the bipolar transistor on a semiconductor substrate. SOLUTION: The method for manufacturing the semiconductor device includes steps for forming a collector layer, an insulating film on the semiconductor substrate, forming two base opening regions having different widths on the insulating film, forming two base layers to cover the two base opening regions after its epitaxial growth, and forming an emitter layer on the two base layers. The first base layer is formed uniformly in the base opening region having a wide width, and the second base layer is formed in a plug shape by embedding in the base opening region having the narrow width. COPYRIGHT: (C)2005,JPO&NCIPI
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