发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
After forming a hole in an insulating film, a first tungsten film is formed over the wall and bottom surfaces of the hole. Then, a second tungsten film is formed by using the first tungsten film as a seed layer to fill up the hole. When the first tungsten film is formed, the average value of the diameters of crystal grains of the portion of the first tungsten film which is formed on the bottom surface of the hole is suppressed to 30 nm or less.
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申请公布号 |
US2005023702(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20040830134 |
申请日期 |
2004.04.23 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NISHIMURA ATSUSHI;HINOMURA TORU;IKEDA ATSUSHI;KISHIDA TAKENOBU |
分类号 |
H01L21/285;H01L21/44;H01L21/768;H01L23/52;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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