发明名称 |
Semiconductor device having improved short channel effects, and method of forming thereof |
摘要 |
Semiconductor device having improved short channel effects and method of forming thereof. One method includes forming a gate oxide over a substrate and a gate electrode over the gate oxide, and implanting impurities into the substrate using the gate electrode as an implant mask to form a lightly-doped region in the substrate. The method includes depositing second spacer material adjacent to the gate electrode, forming a first spacer on the second spacer material, and implanting impurities into the substrate and through a portion of the lightly-doped region using the first spacer as an implant mask to form a first junction region in the substrate. The method includes removing the first spacer, etching the second spacer material to form a second spacer adjacent the gate electrode, and implanting impurities into the substrate using the second spacer as an implant mask to form a second junction region in the substrate.
|
申请公布号 |
US2005026342(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20030628747 |
申请日期 |
2003.07.28 |
申请人 |
FUNG KA-HING;WANG YIN-PING;HUANG HUAN-TSUNG |
发明人 |
FUNG KA-HING;WANG YIN-PING;HUANG HUAN-TSUNG |
分类号 |
H01L21/336;H01L21/8234;H01L21/8238;(IPC1-7):H01L21/336;H01L21/823 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|