MEMORY CELL STRING IN RESISTANT CROSS POINT MEMORY CELL ARRAY

摘要

PROBLEM TO BE SOLVED: To improve packaging density without losing electric separation of a memory cell. SOLUTION: A system and a method for performing reading operation from a memory cell (12) in a memory cell string are provided. The method comprises a step for supplying a fixed current to the memory cell string, a step for measuring 1st voltage impressed to the memory cell string, a step for writing the memory cell in a 1st state, a step for measuring 2nd voltage impressed to the memory cell string, and a step for determining whether the 1st voltage is different from the 2nd voltage or not. COPYRIGHT: (C)2005,JPO&NCIPI