发明名称 |
SOLUTION-PROCESSED THIN FILM TRANSISTOR FORMATION METHOD |
摘要 |
An exemplary solution-processed thin film transistor formation method of the invention forms solution-processed thin film layers into a transistor structure. During formation, semiconductor portions of the transistor structure are selectively heated via a laser to modify the material state of semiconductor material from a solution deposited material state to a thin film layer material state.
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申请公布号 |
US2005026344(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20030633208 |
申请日期 |
2003.07.31 |
申请人 |
WENG JIAN-GANG;KWASNY DAVID M.;ORR DAVID |
发明人 |
WENG JIAN-GANG;KWASNY DAVID M.;ORR DAVID |
分类号 |
H01L51/00;H01L51/05;H01L51/30;H01L51/40;(IPC1-7):H01L21/00 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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