Method of polishing metal and metal/dielectric structures

摘要

A composition for the chemical-mechanical polishing of metal and metal/dielectric structures, containing 7 to 100% by volume of a cationically stablilized silica sol which contains 30% by weight of SiO2 and the SiO2 particles of which have a mean particle size of less than 300 nm, with a pH of from 4 to 10, is distinguished by a TaN removal rate of >=40 nm per min and an improved barrier layer:metal selectivity of at least 2:1 or greater and a barrier layer:dielectric selectivity of at least 2:1 or above.