| 摘要 |
A dielectric film having a layer of Pr2O3 and a layer of another lanthanide oxide, and a method of fabricating such a dielectric film produce a reliable gate dielectric with a equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is formed as a nanolaminate of Pr2O3 and a lanthanide oxide selected from the group consisting of Nd2O3, Sm2O3, Gd2O3, and Dy2O3 by electron beam evaporation. These gate dielectrics having a lanthanide oxide nanolaminate are thermodynamically stable such that the nanolaminate forming the gate dielectric will have minimal reactions with a silicon substrate or other structures during processing.
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