发明名称 |
Aluminum interconnects with metal silicide diffusion barriers |
摘要 |
An aluminum interconnect which extends adjacent to and is insulated from a stacked capacitor structure to facilitate electrical communication between an active device region of a semiconductor substrate of a semiconductor device structure and a bit line extending above the semiconductor substrate. The aluminum interconnect is disposed within a trench and may include a metal silicide layer adjacent the active device region to form a buried metal diffusion layer. The aluminum interconnect may also include a metal nitride layer disposed between the metal silicide and aluminum. The invention also includes methods of fabricating aluminum interconnects adjacent stacked capacitor structures and semiconductor device structures which include the aluminum interconnects.
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申请公布号 |
US2005023587(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20040931181 |
申请日期 |
2004.08.30 |
申请人 |
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发明人 |
LEE RUOJIA;KAUFFMAN RALPH;KELLER J. DENNIS |
分类号 |
H01L21/02;H01L21/285;H01L21/60;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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